silicon npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5266 issue 2 page 1 of 3 2N3700 ? high voltage, medium power silicon planar npn transis tor ? hermetic to18 metal package ? high reliability screening options available ? cecc and space quality level options absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 140v v ceo collector ? emitter voltage 80v v ebo emitter ? base voltage 7.0v i c continuous collector current 1.0a p d total power dissipation at t a = 25c 0.5w derate above t a = 25c 2.9mw/c t c = 25c 1.0w derate above t c = 25c 5.7mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. unit r ja thermal resistance, junction to ambient 350 c/w r jc thermal resistance, junction to case 175 c/w
silicon npn transistor 2N3700 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5266 issue 2 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. unit v (br)ceo (1) collector-emitter breakdown voltage i c = 30ma i b = 0 80 v v eb = 7.0v i c = 0 10 a i ebo emitter-base cut-off current v eb = 5.0v i c = 0 10 i ces collector-emitter cut-off current v ce = 90v 10 na t a = 150c 5 i cbo collector-base cut-off current v cb = 140v i e = 0 10 a i c = 0.10ma v ce = 10v 50 i c = 10ma v ce = 10v 90 i c = 150ma v ce = 10v 100 300 t a = -55c 40 i c = 500ma v ce = 10v 50 h fe (1) dc current gain i c = 1.0a v ce = 10v 15 i c = 150ma i b = 15ma 0.2 v ce(sat) (1) collector-emitter saturation voltage i c = 500ma i b = 50ma 0.5 v be(sat) (1) base-emitter saturation voltage i c = 150ma i b = 15ma 1.1 v dynamic characteristics i c = 50ma v ce = 10v |h fe | magnitude of small-signal short-circuit current gain f = 20mhz 4 5 20 i c = 1.0ma v ce = 5.0v h fe small-signal short-circuit current gain f = 1.0khz 80 400 v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 12 pf v eb = 0.5v i c = 0 c ibo input capacitance f = 1.0mhz 60 pf notes notes notes notes (1) pulse width 300us, 2%
silicon npn transistor 2N3700 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5266 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) 1 3 2 2.54 (0.100) nom. 0.48 (0.019)0.41 (0.016) dia. 5.84 (0.230)5.31 (0.209) 4.95 (0.195)4.52 (0.178) 5 . 33 ( 0 . 210 ) 4 . 32 ( 0 . 170 ) 12 . 7 ( 0 . 500 ) m i n . to 18 (to - 206 a a ) metal package underside view underside view underside view underside view pin 1 - emitter pin 2 - base pin 3 - collector
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